TC58NVG2S3EBAI5 Toshiba TC58NVG2S3EBAI5 NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 63-Pin, TFBGA

Part Nnumber
TC58NVG2S3EBAI5
Description
TC58NVG2S3EBAI5 NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 63-Pin, TFBGA
Producer
Toshiba
Basic price
9,83 EUR

The product with part number TC58NVG2S3EBAI5 (TC58NVG2S3EBAI5 NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 63-Pin, TFBGA) is from company Toshiba and distributed with basic unit price 9,83 EUR. Minimal order quantity is 1 pc.


Cell TypeNAND Dimensions13 x 10 x 0.74mm Height0.74mm Length13mm Maximum Operating Supply Voltage4.6 V Maximum Operating Temperature+85 °C Maximum Random Access Time25ns Memory Size4 GByte Minimum Operating Supply Voltage-0.6 V Minimum Operating Temperature-40 °C Mounting TypeSurface Mount Number of Bits per Word8bit Number of Words512M Organisation512M x 8 Package TypeTFBGA Pin Count63 Width10mm Product Details Flash Memory, Toshiba Flash EPROM FLASH memory is non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.


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(keyword TC58NVG2S3EBAI5 Toshiba TC58NVG2S3EBAI5 NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 63-Pin, TFBGA)
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