Product Details for Material from Toshiba - 2SK3079ATE12LQ - RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS

2SK3079ATE12LQ Toshiba RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS

Part Nnumber
2SK3079ATE12LQ
Description
RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS
Producer
Toshiba
Basic price
1,23 EUR

The product with part number 2SK3079ATE12LQ (RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS) is from company Toshiba and distributed with basic unit price 1,23 EUR. Minimal order quantity is 1000 pc.


Toshiba Product Category: RF MOSFET Transistors RoHS:  Details Transistor Type: MOSFET Power Id - Continuous Drain Current: 3 A Transistor Polarity: N-Channel Frequency: 470 MHz Technology: Si Gain: 13.5 dB Output Power: 2.2 W Mounting Style: SMD/SMT Package/Case: PW-X-4 Packaging: Reel Brand: Toshiba Pd - Power Dissipation: 20 W Product Type: RF Power MOSFET Factory Pack Quantity: 3000 Type: 470 MHz Band Amplifier Vgs th - Gate-Source Threshold Voltage: 0.8 V


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